STRUCTURAL TRANSITIONS IN C-60 FILMS ON HIGH-TEMPERATURE ANNEALING

Citation
Jl. Gong et al., STRUCTURAL TRANSITIONS IN C-60 FILMS ON HIGH-TEMPERATURE ANNEALING, Materials letters, 25(3-4), 1995, pp. 185-188
Citations number
14
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
25
Issue
3-4
Year of publication
1995
Pages
185 - 188
Database
ISI
SICI code
0167-577X(1995)25:3-4<185:STICFO>2.0.ZU;2-D
Abstract
X-ray diffraction analysis on the structure of C-60 films was carried our, and the effects of annealing on the structure of C-60 films were discussed. We found a new crystalline phase with a planar spacing of 0 .95 nm of the crystal planes parallel to the substrate. This crystalli ne phase may be related to stressed internal C-60 molecules packed bet ween fee C-60 crystallites, i.e. may be an intercrystalline phase stab ilized by a small amount of C-70 due to sublimation at relatively high temperature. In addition, the structure of the films is sensitive to the deposition conditions and the hcp phase can exist either as an ind ependent phase or as stacking faults along the fee [111] axis.