ELECTRICAL-CONDUCTION MECHANISM IN A-SE-80-XTEXGA20 FILMS -LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-20)

Citation
Zh. Khan et al., ELECTRICAL-CONDUCTION MECHANISM IN A-SE-80-XTEXGA20 FILMS -LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-20), Journal of physics. Condensed matter, 7(47), 1995, pp. 8979-8991
Citations number
38
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
7
Issue
47
Year of publication
1995
Pages
8979 - 8991
Database
ISI
SICI code
0953-8984(1995)7:47<8979:EMIAF->2.0.ZU;2-0
Abstract
The dark conductivity and transient photoconductivity measurements on thin films of a-Se80-xTexGa20 (0 less than or equal to x less than or equal to 20) have been reported in the temperature range from 148 to 3 18 K. The results indicate that, at higher temperatures, hopping condu ction takes place in the tail states. At lower temperatures the conduc tion is due to variable-range hopping, which is in fair agreement with the Mott condition of variable-range hopping. The transient photocond uctivity measurements show non-exponential decay, and recombination in these glasses may be considered to take place through the valence and conduction bands.