LOWEST-ORDER VERTEX-CORRECTION CONTRIBUTION TO THE DIRECT-GAP OF SILICON

Authors
BOBBERT PA VANHAERINGEN W
Citation
Pa. Bobbert et W. Vanhaeringen, LOWEST-ORDER VERTEX-CORRECTION CONTRIBUTION TO THE DIRECT-GAP OF SILICON, Physical review. B, Condensed matter, 49(15), 1994, pp. 10326-10331
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
49
Issue
15
Year of publication
1994
Pages
10326 - 10331
Database
ISI
SICI code
0163-1829(1994)49:15<10326:LVCTTD>2.0.ZU;2-H
Abstract
We have calculated the contribution of the lowest-order vertex-correct ion diagram to the direct gap of silicon at the GAMMA-point, taking in to account the dynamic screening of the electron-electron interaction. Our best calculation yields a contribution of 0.12 eV. This result su pports the assumption of the GW approximation that vertex corrections can be neglected. We do not find a significant shift of the absolute e nergies.