INTRINSIC BISTABILITY AND HOLE-CHARGE BUILDUP IN ASYMMETRIC P-TYPE RESONANT-TUNNELING STRUCTURES

Authors
HAYDEN RK EAVES L HENINI M MAUDE DK PORTAL JC
Citation
Rk. Hayden et al., INTRINSIC BISTABILITY AND HOLE-CHARGE BUILDUP IN ASYMMETRIC P-TYPE RESONANT-TUNNELING STRUCTURES, Physical review. B, Condensed matter, 49(15), 1994, pp. 10745-10748
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
49
Issue
15
Year of publication
1994
Pages
10745 - 10748
Database
ISI
SICI code
0163-1829(1994)49:15<10745:IBAHBI>2.0.ZU;2-1
Abstract
A p-doped resonant-tunneling device with tunnel barriers having differ ent transmission coefficients is investigated. The magneto-oscillation s observed in the tunnel current when a quantizing magnetic field is a pplied along the direction of current flow are used to measure the res onant space-charge buildup in the quantum well. For one bias direction , intrinsic bistability is observed on one of the resonant peaks in th e current-voltage characteristics.