ELECTRONIC-STRUCTURE OF [113]-GROWN (GAAS)M(ALAS)N SUPERLATTICES

Authors
IKONIC Z SRIVASTAVA GP INKSON JC
Citation
Z. Ikonic et al., ELECTRONIC-STRUCTURE OF [113]-GROWN (GAAS)M(ALAS)N SUPERLATTICES, Physical review. B, Condensed matter, 49(15), 1994, pp. 10749-10752
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
49
Issue
15
Year of publication
1994
Pages
10749 - 10752
Database
ISI
SICI code
0163-1829(1994)49:15<10749:EO[(S>2.0.ZU;2-N
Abstract
The electronic structure of (GaAs)m(AlAs), superlattices, with 1 less- than-or-equal-to (m,n) less-than-or-equal-to 10, grown in the [113] di rection is calculated by employing the local empirical pseudopotential approach within the S-matrix implementation. Short period (n,n) super lattices are predicted to have a marginally direct (indirect) band gap for even (odd) values of n. The calculated results are compared again st those for the more conventional growth directions.