We have studied the effect of hydrogen in the CoSi2/Si(100) interface
on the Schottky-barrier height of CoSi2 on n-type and p-type Si(100).
It was found that hydrogenation results in an increase of 120 meV in t
he barrier height to n-type Si(100). Measurements of the hydrogen conc
entration in the interface, using quantitative ion-beam techniques, we
re used to establish the correlation between the change in barrier hei
ght and hydrogen concentration; other hydrogen effects such as passiva
tion of shallow donor and acceptor impurities in silicon were ruled ou
t. The results demonstrate that 8 X 10(15) hydrogen atoms/cm2 can alte
r an interface layer and thereby change the pinning position of the Fe
rmi level.