EFFECT OF INTERFACIAL HYDROGEN IN COSI2 SI(100) SCHOTTKY-BARRIER CONTACTS/

We have studied the effect of hydrogen in the CoSi2/Si(100) interface on the Schottky-barrier height of CoSi2 on n-type and p-type Si(100). It was found that hydrogenation results in an increase of 120 meV in t he barrier height to n-type Si(100). Measurements of the hydrogen conc entration in the interface, using quantitative ion-beam techniques, we re used to establish the correlation between the change in barrier hei ght and hydrogen concentration; other hydrogen effects such as passiva tion of shallow donor and acceptor impurities in silicon were ruled ou t. The results demonstrate that 8 X 10(15) hydrogen atoms/cm2 can alte r an interface layer and thereby change the pinning position of the Fe rmi level.