LIGAND ENDOR ON SUBSTITUTIONAL MANGANESE IN GAAS

In this paper Ga ligand electron-nuclear double resonance measurements are reported on the substitutional Mn2+ center in GaAs. On the basis of these experiments it is concluded that the Mn2+ center is substitut ional on a Ga site. From the electron paramagnetic resonance linewidth and the crystal-field parameter an estimate is made of the hyperfine interaction with the nearest-neighbor As atoms. The data are compared to those obtained for Fe3+ in III-V semiconductors. It is found that M n2+ has a more localized character than the Fe3+ center. Finally, the quadrupole interaction of the Ga atoms is discussed.