MAGNETOPOLARON EFFECT IN ONE-PHONON RESONANT RAMAN-SCATTERING FROM BULK SEMICONDUCTORS - FROHLICH INTERACTION

Magnetopolaron features in the spectra of resonant Raman scattering fr om bulk semiconductors are studied theoretically in the scattering con figuration which allows for Frohlich interaction with the Raman phonon . We show that the theoretical treatment of scattering efficiency shou ld include the vertex corrections to the electron-phonon and hole-phon on interaction in order to preserve the well-known dipole-forbidden na ture of the scattering process. The fine balance between the electron and hole contributions to the scattering amplitude is grossly upset if the vertex corrections are neglected, resulting in a tremendous but u nphysical increase of the scattering efficiency. The resonant profile for the scattering intensity is calculated as a function of the magnet ic field. It shows the splitting characteristic of the magnetopolaron range.