EFFECT OF THE ELECTRON SURFACE-OPTICAL-PHONON INTERACTION ON THE IMPURITY-STATE ENERGIES IN A SEMICONDUCTOR QUANTUM-WELL

Using a variational technique, the change of ground-state energy and b inding energy of an impurity atom with impurity position and well widt h in a GaAs-Ga0.7Al0.3As quantum well is calculated. In the calculatio n the electron-surface-optical-phonon interactions are taken into acco unt. The result is discussed. It is found that the electron-phonon int eraction energy depends not only on the width of the well but also on the position of the impurity atom in the well.