H. Leon et al., ELECTRON-PHONON INTERACTION AND LOW-FIELD DRIFT MOBILITY IN A POLAR SEMICONDUCTOR QUANTUM-WELL, Thin solid films, 266(1), 1995, pp. 38-47
We have calculated relaxation times by means of a general iterative pr
ocedure when the electron-phonon interaction is included via three sca
ttering mechanisms: the acoustic deformation potential, the piezoelect
ric of the acoustic branch, and longitudinal optical mode coupling (LO
). Confinement of LO vibrations is taken into account by means of an a
ppropriate Hamiltonian, and this leads to some selection rules for thi
s interaction, which are carefully discussed. Screening of the electro
n-phonon interaction is considered. Mobility calculations are carried
out in a size-quantum-limit (SQL) approximation. We have compared the
effects on the screening contributions of the different scattering mec
hanisms and the confinement effects, produced by the use of different
approximations for the electronic part, ranging from a self-consistent
solution to an infinite barrier model.