ELECTRON ION RECOMBINATION IN DENSE GASEOUS XE/

Citation
M. Ukai et al., ELECTRON ION RECOMBINATION IN DENSE GASEOUS XE/, International journal of mass spectrometry and ion processes, 150, 1995, pp. 451-467
Citations number
43
Categorie Soggetti
Spectroscopy,"Physics, Atomic, Molecular & Chemical
ISSN journal
01681176
Volume
150
Year of publication
1995
Pages
451 - 467
Database
ISI
SICI code
0168-1176(1995)150:<451:EIRIDG>2.0.ZU;2-5
Abstract
The electron mobility it, and the electron/ion recombination rate cons tant k(r) in dense gaseous xenon at 0.9, 1.6, and 5.0 x 10(21) atom cm (-3), near the critical density of 5.1 x 10(21) atom cm(-3) at 292 K, have been measured as a function of an external electric field using a pulse-radiolysis d,c.-conductivity method. Although the values of mu( e) are much smaller than those for previous measurements in CH4, Ar, a nd Kr, k(r) has been found to be well below the diffusion-controlled r ecombination rate constant indicated by the reduced Debye equation. By comparison with theories, possible reaction-control stages involving the relaxation processes of excess energy, which emerges upon recombin ation of ion clusters with electrons via resonant capture, and their d ependence on gaseous media are discussed.