RECONSTRUCTION-DEPENDENT ORIENTATION OF AG(111) FILMS ON SI(001)

The growth of Ag on C-misoriented, single-domain Si(001) surfaces at 1 30 K yields continuous and epitaxial overlayers with a (111) orientati on. The close-packed rows of Ag atoms are parallel to the (2X1) dimer rows and run perpendicular to the step edges. The dimer orientation ca n be rotated by 90 degrees by inducing a (3X2) reconstruction on the S i(001) surface. Again, single-crystal Ag(111) films are obtained; howe ver, their in-plane orientation is now rotated by 90 degrees. In this case, the close-packed rows of Ag atoms are aligned parallel to the st ep edges.