SELF-OSCILLATIONS OF DOMAINS IN DOPED GAAS-ALAS SUPERLATTICES

Citation
J. Kastrup et al., SELF-OSCILLATIONS OF DOMAINS IN DOPED GAAS-ALAS SUPERLATTICES, Physical review. B, Condensed matter, 52(19), 1995, pp. 13761-13764
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
19
Year of publication
1995
Pages
13761 - 13764
Database
ISI
SICI code
0163-1829(1995)52:19<13761:SODIDG>2.0.ZU;2-S
Abstract
Self-sustained oscillations of the current have been observed and simu lated in a doped GaAs-AlAs superlattice under voltage control. Dependi ng on the applied bias the detected frequencies vary between 250 kHz a t low voltages and 20 MHz at high voltages. Amplitude and frequency de crease with increasing carrier density until, at very high excitation densities, stable electric-field domains are formed. A discrete drift model reproduces the current oscillations and shows that they can be a ttributed to the spatial oscillation of the boundary between the two d omains.