D-BAND EXCITATIONS IN II-VI SEMICONDUCTORS - A BROKEN-SYMMETRY APPROACH TO THE CORE-HOLE

Local-density approximation (LDA) band-structure calculations place th e 3d band of zinc-blende ZnO, ZnS, ZnSe, and ZnTe at 5.4, 6.4, 6.8, an d 7.5 eV below the valence-band maximum (VBM), while photoemission mea surements place them at 7.8, 9.0, 9.4, and 9.8 eV below the VBM, respe ctively. We show that this similar to 3-eV LDA error can be accounted for using a ''broken symmetry'' band-structure approach. In this appro ach, a d core hole is placed in an impuritylike splitoff d subband res ulting from the creation of the hole on a particular Zn sublattice. Se lf-consistent solutions to such a constrained LDA problem reveal that the final hole state is sufficiently localized to trigger a self-inter action correction of 3-4 eV, needed to explain the discrepancy with ex periment. This 3-4 eV shift is reduced, by screening effects, from the 9.7-eV value in a free Zn atom. Finally, we calculated the binding en ergy E(Mn) for Mn 3d states in ZnTe:Mn and the effective Coulomb inter action parameter U-eff. Significant improvements over the results of l ocal-spin-density calculations were found. The calculated E(Mn) = E(VB M) - 3.93 eV and U-eff = 6.85 eV are in good agreement with experiment s.