THE EFFECT OF SUBSTRATE-TEMPERATURE ON OXYGEN ABSORPTION DURING SIMULTANEOUS ION-BOMBARDMENT AND AG DEPOSITION ON SI

The adsorption of oxygen atoms during simultaneous deposition of sputt ered silver atoms on a silicon target and ion irradiation (Ar+, ion en ergy 50-175 keV, ion flux density -10(12) cm(-2) s(-1)) is investigate d It is shown that the amount of the adsorbed oxygen varies non-monoto nically with the substrate temperature. The experimental results are c onsidered phenomenologically including basic elementary processes, suc h as adsorption of residual gases, desorption, preferential sputtering , redistribution of atoms at the interface. The presence of the activa ted atoms on the surface generated by incident ions is assumed, it is shown that the prevailing processes determining the amount of adsorbed oxygen at the interface are the processes of activation of surface at oms and thermal desorption.