We have achieved spectrum narrowing to 1 pm in a high-power ArF excime
r laser injection locked by an all solid-state fourth harmonic (193.4
nm) seed source of 773.6 nm Ti:sapphire laser radiation. Superior lase
r properties such as sufficient output energy (90 mJ/pulse, 50 pps), l
ocking efficiency exceeding 90%, wavelength drift less than 0.4 pm, an
d spectrum bandwidth fluctuation less than 0.2 pm were obtained, which
meet the requirements for 1 Gbit dynamic random access memory microli
thography. (C) 1995 American Institute of Physics.