HIGH-FIELD EFFECTS IN HIGH-RESISTIVITY SILICON-CARBIDE IN LATERAL CONFIGURATIONS

Results of the high field performance of single-crystal bulk 6H-SiC of relatively high resistivity (similar to 500 Omega cm) are reported. P rebreakdown and breakdown phenomena of SIC at high fields are studied using lateral device geometries, particularly suitable for photoconduc tive power switches and other high voltage power devices. The influenc e of the electrode configuration, gap length, sample geometry, and con tact technology on the high field responses of SiC is discussed. Ohmic response and relatively large hold-off fields (>80 kV/cm) are reporte d for this material in vacuum and SF6 gas. (C) 1995 American Institute of Physics.