HIGH-FIELD DIRECT-CURRENT CONDUCTION IN EPITAXIAL ZNS FILMS

Authors
BRINGUIER E BRIOT O
Citation
E. Bringuier et O. Briot, HIGH-FIELD DIRECT-CURRENT CONDUCTION IN EPITAXIAL ZNS FILMS, Applied physics letters, 67(23), 1995, pp. 3486-3488
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
23
Year of publication
1995
Pages
3486 - 3488
Database
ISI
SICI code
0003-6951(1995)67:23<3486:HDCIEZ>2.0.ZU;2-9
Abstract
The current-voltage characteristic of a semiinsulating, monocrystallin e ZnS film grown by metalorganic vapor-phase epitaxy is reported. High -field conduction is found to occur in the same field range (1.0-1.5 M V/cm) as in highly defected, electroluminescent material. It is conclu ded that the conduction mechanism underlying the operation of ZnS-base d electroluminescent devices is bulk controlled. (C) 1995 American Ins titute of Physics.