H. Satake et A. Toriumi, COMMON ORIGIN FOR STRESS-INDUCED LEAKAGE CURRENT AND ELECTRON TRAP GENERATION IN SIO2, Applied physics letters, 67(23), 1995, pp. 3489-3490
The origin of stress-induced leakage current in ultrathin SiO2 has bee
n quantitatively investigated on the basis of the experimental results
on temperature dependence of stress-induced leakage current. We found
that stress-induced leakage current is dependent on stressing tempera
ture, and that it is independent of measurement temperature. It has be
en quantitatively demonstrated for the first time that the activation
energy of the appearance of stress-induced leakage current agrees well
with that of electron trap generation so far reported. It is discusse
d quantitatively that stress-induced leakage current and electron trap
generation have a common origin. (C) 1995 American Institute of Physi
cs.