SINGLE-CRYSTALLINE, SINGLE-DOMAIN EPITAXY OF PBTIO3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Citation
Yf. Chen et al., SINGLE-CRYSTALLINE, SINGLE-DOMAIN EPITAXY OF PBTIO3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 67(23), 1995, pp. 3503-3505
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
23
Year of publication
1995
Pages
3503 - 3505
Database
ISI
SICI code
0003-6951(1995)67:23<3503:SSEOPT>2.0.ZU;2-3
Abstract
Single-crystalline and single-domain PbTiO3 films with thickness of 30 00 Angstrom have been prepared by metalorganic chemical vapor depositi on (MOCVD), using metalorganic precursors of tetra-ethyl-lead and iso- propoxide titanium. The nature of single-crystalline epitaxy and singl e domain of as-grown films was characterized by x-ray diffraction (XRD ), synchrotron radiation (SR), and Rutherford backscattering (RES). Us ing atomic force microscopy (AFM), the evidence of layer-by-layer grow th was observed. The growth steps on the surface may be attributable t o the formation of single-crystalline and single-domain PbTiO3 film wi th 3000-Angstrom thickness. (C) 1995 American Institute of Physics.