BACKGATING IN PSEUDOMORPHIC IN0.15GA0.85AS AL0.25GA0.75AS MODFETS WITH A GAAS-ER BUFFER LAYER/

Authors
SETHI S MANSFIELD J BHATTACHARYA PK
Citation
S. Sethi et al., BACKGATING IN PSEUDOMORPHIC IN0.15GA0.85AS AL0.25GA0.75AS MODFETS WITH A GAAS-ER BUFFER LAYER/, IEEE electron device letters, 16(12), 1995, pp. 537-539
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
12
Year of publication
1995
Pages
537 - 539
Database
ISI
SICI code
0741-3106(1995)16:12<537:BIPIAM>2.0.ZU;2-8
Abstract
A new GaAs:Er buffer layer grown by MBE has been developed which signi ficantly reduces backgating currents (by 3 to 4 orders of magnitude) i n pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor s (MODFET's). The buffer layer is highly resistive, in the 10(2)-10(5) Ohm . cm range over the Er-doping range investigated, Presence of int ernal Schottky barriers resulting from high-density ErAs precipitates has been proposed to be the cause of the high resistivity.