SUBTHRESHOLD KINKS IN FULLY DEPLETED SOI MOSFETS

Measured current-voltage characteristics of scaled, floating-body, ful ly depleted (FD) SOI MOSFET's that show subthreshold kinks controlled by the back-gate (substrate) bias are presented. The underlying physic al mechanism is described, and is distinguished from the well known ki nk effect in partially depleted devices, The physical insight attained qualifies the meaning of FD/SOI and implies new design issues for low -voltage FD/SOI CMOS.