METAL-SEMICONDUCTOR FLUCTUATION IN THE SN ADATOMS IN THE SI(111)-SN AND GE(111)-SN (ROOT-3X-ROOT-3)R30-DEGREES RECONSTRUCTIONS

Authors
GOTHELID M BJORKQVIST M GREHK TM LELAY G KARLSSON UO
Citation
M. Gothelid et al., METAL-SEMICONDUCTOR FLUCTUATION IN THE SN ADATOMS IN THE SI(111)-SN AND GE(111)-SN (ROOT-3X-ROOT-3)R30-DEGREES RECONSTRUCTIONS, Physical review. B, Condensed matter, 52(20), 1995, pp. 14352-14355
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
52
Issue
20
Year of publication
1995
Pages
14352 - 14355
Database
ISI
SICI code
0163-1829(1995)52:20<14352:MFITSA>2.0.ZU;2-Z
Abstract
The two components of the Sn 4d core level in the Si(111)-Sn and Ge(11 1)-Sn. (root 3 X root 3)R30 degrees structures are proposed to arise f rom semiconductor-metal fluctuations in the Sn adatom layer. Adsorptio n of potassium on the Si(111)-Sn (root 3 X root 3)R30 degrees surface suppresses the metallic component and shifts the tin into a purely sem iconducting phase with a filled dangling bond state.