OPTICAL FUNCTIONS OF ION-IMPLANTED, LASER-ANNEALED HEAVILY-DOPED SILICON

Citation
Ge. Jellison et al., OPTICAL FUNCTIONS OF ION-IMPLANTED, LASER-ANNEALED HEAVILY-DOPED SILICON, Physical review. B, Condensed matter, 52(20), 1995, pp. 14607-14614
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
20
Year of publication
1995
Pages
14607 - 14614
Database
ISI
SICI code
0163-1829(1995)52:20<14607:OFOILH>2.0.ZU;2-G
Abstract
The optical functions of silcon heavily doped with Ge, P, As, and B ar e determined using spectroscopic ellipsometry measurements from 240 to 840 nm (5.16 to 1.47 eV). Below the direct band gap, there is a resid ual enhancement of the optical-adsorption coefficient for silicon heav ily doped with n-type dopants, which cannot be explained by surface ro ughness. In the low-energy region of the observed spectrum, it is foun d that both free-carrier and strain effects alter the complex dielectr ic function.