OPTICALLY DETECTED CYCLOTRON-RESONANCE STUDIES OF RADIATIVE PROCESSESIN ALXGA1-XAS GAAS HIGH-ELECTRON-MOBILITY STRUCTURES/

Authors
GODLEWSKI M LUNDSTROM T ZHAO QX CHEN WM HOLTZ PO MONEMAR B ANDERSON TG
Citation
M. Godlewski et al., OPTICALLY DETECTED CYCLOTRON-RESONANCE STUDIES OF RADIATIVE PROCESSESIN ALXGA1-XAS GAAS HIGH-ELECTRON-MOBILITY STRUCTURES/, Physical review. B, Condensed matter, 52(20), 1995, pp. 14688-14692
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
52
Issue
20
Year of publication
1995
Pages
14688 - 14692
Database
ISI
SICI code
0163-1829(1995)52:20<14688:ODCSOR>2.0.ZU;2-K
Abstract
The nature of radiative recombination processes in high-electron-mobil ity AlxGa1-xAs/GaAs heterostructures is revealed from optically detect ed cyclotron resonance (ODCR) experiments. A mechanism of ODCR detecti on is observed and is related to the band bending across the GaAs acti ve layer caused by impact ionization of shallow donors and accepters b y carriers heated at CR conditions. The results of the ODCR experiment s are compared with those obtained from photoluminescence measurements under an applied gate voltage.