LOW-LOAD FRICTION BEHAVIOR OF EPITAXIAL C-60 MONOLAYERS UNDER HERTZIAN CONTACT

Citation
Ud. Schwarz et al., LOW-LOAD FRICTION BEHAVIOR OF EPITAXIAL C-60 MONOLAYERS UNDER HERTZIAN CONTACT, Physical review. B, Condensed matter, 52(20), 1995, pp. 14976-14984
Citations number
48
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
52
Issue
20
Year of publication
1995
Pages
14976 - 14984
Database
ISI
SICI code
0163-1829(1995)52:20<14976:LFBOEC>2.0.ZU;2-D
Abstract
Monolayers of C-60 molecules epitaxially grown on GeS(001) in ultrahig h vacuum were investigated by friction force microscopy in air. The fr ictional force F-f on the GeS substrate was found to be proportional t o the normal force F-n in the first approximation, whereas the frictio n measured on the first C-60 monolayer fits excellently to a F-f propo rtional to F-n(2/3) dependence. This different frictional behavior cau ses a flip in contrast in spatially resolved friction force maps. Addi tionally, the second C-60 monolayer exhibited a lower friction than th e first layer at normal forces below the critical force where the cont rast flips. The measured data are analyzed using a generalized Hertzia n theory, which considers capillary condensation.