SPECIFIC STRUCTURAL FEATURES OF GAAS EPIT AXIAL LAYERS GROWN BY THE LIQUID-PHASE EPITAXY ON SI(111) SUBSTRATES

Authors
ABRAMOV AV DERYAGIN NG MILVIDSKII MG TRETYAKOV DN YUGOVA TG
Citation
Av. Abramov et al., SPECIFIC STRUCTURAL FEATURES OF GAAS EPIT AXIAL LAYERS GROWN BY THE LIQUID-PHASE EPITAXY ON SI(111) SUBSTRATES, Kristallografia, 40(5), 1995, pp. 906-912
Citations number
14
Categorie Soggetti
Crystallography
Journal title
Kristallografia → ACNP
ISSN journal
00234761
Volume
40
Issue
5
Year of publication
1995
Pages
906 - 912
Database
ISI
SICI code
0023-4761(1995)40:5<906:SSFOGE>2.0.ZU;2-8