OSCILLATORY SURFACE INPLANE LATTICE SPACING DURING GROWTH OF CO AND OF CU ON A CU(001) SINGLE-CRYSTAL

Authors
FASSBENDER J MAY U SCHIRMER B JUNGBLUT RM HILLEBRANDS B GUNTHERODT G
Citation
J. Fassbender et al., OSCILLATORY SURFACE INPLANE LATTICE SPACING DURING GROWTH OF CO AND OF CU ON A CU(001) SINGLE-CRYSTAL, Physical review letters, 75(24), 1995, pp. 4476-4479
Citations number
23
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
75
Issue
24
Year of publication
1995
Pages
4476 - 4479
Database
ISI
SICI code
0031-9007(1995)75:24<4476:OSILSD>2.0.ZU;2-2
Abstract
The in-plane lattice spacing during epitaxial growth of Co and of Cu o n a Cu(001) single crystal substrate has been investigated in the pseu domorphic growth regime by an advanced reflection high energy electron diffraction system with improved lateral resolution. The in-plane lat tice spacing of the surface is found to oscillate as a function of cov erage. For Co/Cu(001) the growing Co monolayers are periodically contr acted for half-integer coverages, whereas for the case of Cu/Cu(001) h omoepitaxy we find periodic expansions for half-integer coverages.