N. Achtziger et W. Witthuhn, IDENTIFICATION OF SE2 AND SE-AS PAIRS IN SILICON BY ELEMENTAL TRANSMUTATION, Physical review letters, 75(24), 1995, pp. 4484-4487
Selenium related levels in silicon are studied by deep level transient
spectroscopy (DLTS) on the radioactive isotope Se-75. During its elem
ental transmutation to As-75, DLTS measurements are performed repeated
ly. The two levels of the isolated Se atom are identified by their con
centration decrease according to the radioactive decay law. The concen
tration of a level at E(c) - 0.19 eV decreases with twice the decay ra
te. This directly proves the involvement of two Se-75 atoms. A Se-As p
air, which forms the intermediate state in the Se-2 --> (Se-As) --> As
-2 transmutation, is discovered (E(2) - 0.15 eV).