CHARACTERIZATION OF THIN ALUMINA FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION (MOCVD) BY HIGH-RESOLUTION SEM, (AR)XPS AND AES DEPTH PROFILING

Thin alumina films deposited by metal-organic chemical vapour depositi on (MOCVD) on AISI 304 substrate have been analyzed using the combinat ion of Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES) and Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS). Bo th the surface and the alumina/substrate interface region have been an alyzed in terms of chemical composition and elemental distribution. On ly OH-groups (bounded as AlO(OH):boehmite) have been found as an impur ity in the surface region of the oxide film. No carbon was detected. D ue to higher temperature deposition, the concentration of OH-groups de creased. After annealing, the oxide/substrate interface changes as. a result of chromium penetration into the alumina matrix. Carbon impurit ies have been detected on both delaminated and annealed alumina film s urfaces. Also small amounts of sulfate groups as well as Ca and C impu rities have been found on delaminated alumina film after prolonged hig h-temperature annealing.