A MODEL FOR OXYGEN PRECIPITATION IN SILICON INCLUDING BULK STACKING-FAULT GROWTH

This paper describes a model that simulates the precipitation kinetics of oxygen and the evolution of the precipitate density in annealed Cz ochralski-silicon wafers. A discrete rate equation representation comb ined with Fokker-Planck equations are used to treat precipitation of o xygen and simultaneous formation of bulk stacking faults. This approac h allows one to describe both statistical clustering during nucleation and diffusional transport during growth. The model considers explicit ly influences of self interstitials and stress on precipitation of oxy gen and thus is able to accurately predict the experimental observatio ns published previously. In particular, we compare simulation results of precipitated oxygen concentration in 2-step, 3-step, complementary metal oxide semiconductor type multi-step, and rapid thermal anneals w ith experimental results taken from the literature and discuss them. ( C) 1995 American Institute of Physics.