TEMPERATURE-DEPENDENCE OF STRAIN IN ZNSE(EPILAYER) GAAS(EPILAYER)/

A study of biaxial strain as a function of temperature in a ZnSe epila yer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coeffi cients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperat ures. (C) 1995 American Institute of Physics.