Hb. Chae et al., THERMAL-CONDUCTIVITY OF DC-PLASMA ASSISTED CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS, Journal of applied physics, 78(11), 1995, pp. 6849-6851
The dc-plasma assisted chemical vapor deposition method has been used
to synthesize diamond films. Thermal diffusivity of these films has be
en measured in 120-800 K with a modified Angstrom method. Phonon scatt
ering processes are considered to analyze thermal conductivity with th
e full Callaway model. In analysis, microstructure of grain boundaries
and extended defect concentration give significant effects to the mea
n free path of phonons in low temperatures. At high temperatures, the
thermal conductivity is governed by the intrinsic thermal resistive pr
ocess, the umkalpp process. Thermal conductivity of the films above 50
0 K is shown to close to a recent measurement of natural diamond. This
supports that the crystal structure of the films is not different wit
h the bulk diamond. (C) 1995 American Institute of Physics.