CHEMICAL APPROACHES TO THE METALORGANIC CVD OF GROUP-III NITRIDES

Thin films of group-III nitrides, such as AlN, GaN, and InN, have a nu mber of important technological applications, for example passive barr ier layers in silicon circuits, high-temperature windows, and dielectr ic optical enhancement layers in magneto-optic multilayer structures. The materials exhibit interesting physical properties, including hardn ess, high thermal conductivity, and resistance to corrosive media. Thi s article reviews recent progress in the development of precursors for the CVD of these materials, the doping of the materials, and the grow th mechanisms.