A superlattice with strained ZnCdSe/ZnSe layers was grown by the metho
d of molecular beam epitaxy. This superlattice was used as the active
layer in the screen of a laser cathode-say tube. The room-temperature
output power was 1.6 W in the form of one longitudinal mode at the 484
nm wavelength. The earlier results obtained at electron energies belo
w 50 keV were improved.