ELECTROSTATIC-FIELD MEASUREMENTS AND BAND FLATTENING DURING ELECTRON-TRANSFER PROCESSES AT SINGLE-CRYSTAL TIO2 ELECTRODES BY ELECTRIC-FIELD-INDUCED OPTICAL 2ND-HARMONIC GENERATION
Jm. Lantz et Rm. Corn, ELECTROSTATIC-FIELD MEASUREMENTS AND BAND FLATTENING DURING ELECTRON-TRANSFER PROCESSES AT SINGLE-CRYSTAL TIO2 ELECTRODES BY ELECTRIC-FIELD-INDUCED OPTICAL 2ND-HARMONIC GENERATION, Journal of physical chemistry, 98(18), 1994, pp. 4899-4905
Optical second harmonic generation (SHG) is employed as a local, time-
resolved measurement of the electrostatic fields at the surface of sin
gle-crystal TiO2 electrodes in contact with aqueous electrolyte soluti
ons. The interfacial SHG at a fundamental wavelength of 584 nm is domi
nated by the electric field-induced second harmonic (EFISH) response f
rom the first 20 nm of the space charge layer at the surface of the se
miconductor. A substantial decrease in the amount of SHG from the elec
trode while under potentiostatic control is observed upon illumination
of the surface with UV light (320 nm) whose energy is above the bandg
ap for TiO2 (3.0 eV or 410 nm). Comparisons of the drop in SHG upon UV
illumination with photovoltage measurements for TiO2 electrodes at op
en circuit verify that this decrease is due to a reduction in the stre
ngth of the electrostatic fields (''band flattening'') within the spac
e charge region upon UV illumination. The EFISH response from the surf
ace decreases with increasing power of the UV illumination, correspond
ing to a band flattening of up to 70% for the highest power densities.
Upon termination of the UV illumination, a slow (10-12 s) rise time i
s observed for the return of the surface SHG to its normal levels. The
unexpected length of this rise time is attributed to the chemical dis
charge of surface charge trap sites on the semiconductor electrode sur
face and can be shortened considerably by the addition of a hole scave
nger such as sodium sulfite to the electrolyte solution.