ELECTRONIC-STRUCTURE OF TERNARY ALLOY SEMICONDUCTORS

Authors
SHIM K TALWAR DN MOH HJ
Citation
K. Shim et al., ELECTRONIC-STRUCTURE OF TERNARY ALLOY SEMICONDUCTORS, Solid state communications, 97(4), 1996, pp. 315-318
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
97
Issue
4
Year of publication
1996
Pages
315 - 318
Database
ISI
SICI code
0038-1098(1996)97:4<315:EOTAS>2.0.ZU;2-L
Abstract
The results of energy gap variation in ternary alloy semiconductors (A (1-x)B(x)C) are reported within the tight-binding (TB) framework of Ko ster and Slater by universalizing TB parameters as a function of x, in which the effects of lattice relaxation and composition disorder are involved appropriately. A good agreement is obtained between the calcu lated results and existing experimental data.