MAGNETIC TRAPPING OF CHARGE-CARRIERS IN THE QUANTUM-WELLS OF AN ASYMMETRIC 2-WELL SEMICONDUCTOR STRUCTURE

It was found that in a magnetic field applied parallel to the layers o f a quantum-size structure a luminescence line associated with the sec ond quantum-well subband of a two-well system is excited. This effect is due to the magnetic localization of charge carriers in quantum well s which is accompanied by a weakening of the tunneling coupling betwee n the wells. The results for a structure with strong tunneling couplin g between the wells are described satisfactorily by a simple semiquant itative model with parabolic wells. A nonmonotonic magnetic-field depe ndence of the intensities of the luminescence lines was observed for a sample with weakly coupled wells. (C) 1995 American Institute of Phys ics.