EFFECT OF THE SURFACE-POTENTIAL ON THE RAMAN-SCATTERING OF LIGHT IN INDIUM-PHOSPHIDE

The results of investigations of n-InP samples with different crystall ographic orientation of the surface are presented: (100)-n=(4.5-6). 10 (16)cm(-3), (110)-n=(2-3). 10(16)cm(-3) (111)-n=(1.3-1.5). 10(16)cm(-3 ). The dependence of the intensity and shape of the Raman lines on the intensity of the exciting laser radiation was measured. The data obta ined are explained on the basis of the model of coupled plasmon-phonon oscillations. It is shown that the effectiveness of the plasmon-phono n interaction depends on the magnitude of the surface potential, which is in turn determined by the treatment of the surface of the semicond uctor plates, including mechanical polishing, additional chemical etch ing, and deposition of a Si3N4 layer. (C) 1995 American Institute of P hysics.