ANALYSIS OF THE PHOTOLUMINESCENCE SPECTRA OF GAAS-LAYERS GROWN FROM GA-BI FLUX SOLUTIONS

Authors
KUNITSYN AE NOVIKOV SV CHALDYSHEV VV
Citation
Ae. Kunitsyn et al., ANALYSIS OF THE PHOTOLUMINESCENCE SPECTRA OF GAAS-LAYERS GROWN FROM GA-BI FLUX SOLUTIONS, Semiconductors, 29(11), 1995, pp. 1090-1091
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
11
Year of publication
1995
Pages
1090 - 1091
Database
ISI
SICI code
1063-7826(1995)29:11<1090:AOTPSO>2.0.ZU;2-Q
Abstract
Layers of GaAs were grown by the method of liquid-phase epitaxy in an open system from Ga-Bi flux solutions. The layers were investigated by the method of low-temperature photoluminescence (at 4.2 K). The chang es in the photoluminescence spectra were analyzed as a function of the bismuth content in the flux solution. (C) 1995 American Institute of Physics.