STRAINED-LAYER INGAAS(P) QUANTUM-WELL SEMICONDUCTOR-LASERS AND SEMICONDUCTOR-LASER AMPLIFIERS

Authors
THIJS PJA TIEMEIJER LF BINSMA JJM VANDONGEN T
Citation
Pja. Thijs et al., STRAINED-LAYER INGAAS(P) QUANTUM-WELL SEMICONDUCTOR-LASERS AND SEMICONDUCTOR-LASER AMPLIFIERS, Philips journal of research, 49(3), 1995, pp. 187-224
Citations number
115
Categorie Soggetti
Engineering
Journal title
Philips journal of research → ACNP
ISSN journal
01655817
Volume
49
Issue
3
Year of publication
1995
Pages
187 - 224
Database
ISI
SICI code
0165-5817(1995)49:3<187:SIQSAS>2.0.ZU;2-L
Abstract
Progress in long-wavelength strained (compressive and tensile) InGaAs( P) quantum well semiconductor lasers and amplifiers for applications i n optical fibre communication systems is reviewed. By the application of grown-in strain, device performance is considerably improved to suc h an extent that conventional bulk and unstrained quantum well active- layer devices are outperformed, while high reliability, similar to tha t of unstrained devices, is maintained.