DIFFUSION OF ION-IMPLANTED PHOSPHORUS IN SILICON

Diffusion of ion-implanted phosphorus in silicon during rapid thermal annealing (RTA) and thermal furnace annealing at various concentration s of radiation defects is investigated using an electrical method. The diffusion of phosphorus in layers previously doped with Ge is also st udied. Part of the inserted phosphorus at thermal treatment is establi shed to be captured by the surplus vacancies as the traps determining the displacement of the phosphorus distribution towards the surface. T he other part of the impurity in form of P atom-Si atom complexes acce lerates the phosphorus diffusion. The temperature independence of the effective coefficient of diffusion of implanted phosphorus in a wide t emperature range of RTA is explained by the closeness of the activatio n energy of diffusion of the complex PI and the activation energy of i ts annealing.