PHOTOLUMINESCENCE INVESTIGATIONS ON LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GALLIUM-ARSENIDE

Authors
SANTHANARAGHAVAN P SANKARANARAYANAN K AROKIARAJ J ANBUKUMAR S KUMAR J RAMASAMY P
Citation
P. Santhanaraghavan et al., PHOTOLUMINESCENCE INVESTIGATIONS ON LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GALLIUM-ARSENIDE, Physica status solidi. a, Applied research, 142(2), 1994, pp. 521-526
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
142
Issue
2
Year of publication
1994
Pages
521 - 526
Database
ISI
SICI code
0031-8965(1994)142:2<521:PIOLEC>2.0.ZU;2-9
Abstract
The growth aspects of 50 mm diameter gallium arsenide single crystals using LEC technique are presented. Defect investigations are made usin g photoluminescence studies. Photoluminescence studies on the wafers r eveal the presence of the EL2 level, the presence of transition metal impurity copper which cannot be eliminated by surface treatments, and the presence of carbon. Photoluminescence scans are also obtained at r oom temperature to study the uniformity. The presence of carbon is als o revealed by FTIR measurements.