EXPERIMENTAL INVESTIGATION AND NUMERICAL-SIMULATION OF LOW-FREQUENCY NOISE IN THIN-FILM SOI MOSFETS

Authors
JOMAAH J BALESTRA F GHIBAUDO G
Citation
J. Jomaah et al., EXPERIMENTAL INVESTIGATION AND NUMERICAL-SIMULATION OF LOW-FREQUENCY NOISE IN THIN-FILM SOI MOSFETS, Physica status solidi. a, Applied research, 142(2), 1994, pp. 533-537
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
142
Issue
2
Year of publication
1994
Pages
533 - 537
Database
ISI
SICI code
0031-8965(1994)142:2<533:EIANOL>2.0.ZU;2-N
Abstract
The low-frequency noise in N- and P-channel SOI MOSFETs is studied exp erimentally and by numerical simulations. The behavior of fully deplet ed devices with thin silicon film is investigated for various substrat e biases and film dopings. The importance of volume inversion, which i nduces a decrease of the noise, is stressed.