DEPENDENCE OF GAAS-MESFET MODEL PARAMETERS ON GATE LENGTH

Authors
DOBRZANSKI L
Citation
L. Dobrzanski, DEPENDENCE OF GAAS-MESFET MODEL PARAMETERS ON GATE LENGTH, Physica status solidi. a, Applied research, 142(2), 1994, pp. 113-116
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
142
Issue
2
Year of publication
1994
Pages
113 - 116
Database
ISI
SICI code
0031-8965(1994)142:2<113:DOGMPO>2.0.ZU;2-3