The short-range structure of amorphous As(40-x)X(60)I(x) (X: S, Se) wi
th x = 0-25 has been investigated by Raman scattering and X-ray diffra
ction. The Raman spectra for both systems are separated into three com
ponents, comprising AsX(3/2) connecting units, discrete AsI3 units and
ring- or chain-clusters of chalcogens. The A(1) mode energy for these
units depends little on the I concentration, suggesting that mixed-an
ion units, which have been observed in amorphous Ge-X-I systems, are n
ot formed in the present As chalcohalide systems. Values for the struc
tural parameters of these units, determined from a least-square analys
is of the X-ray intensity function, have indicated that all of the I a
toms added contribute to the formation of AsI3 units and that the exce
ss X atoms participate in the formation of AsX(3/2) connecting units,
particularly at higher x, i.e., the breakdown of AsX(3/2) units bridge
d by corner-shared X atoms is promoted with increasing I content. This
is supported by the fact that the first sharp diffraction peak in the
structure factor of amorphous As(40)X(60) disappears in the I rich re
gion.