FORMATION OF CARBON AGGREGATES IN ION-IMPLANTED AMORPHOUS AS-SE

Results are presented on the dc and ac conductivity and dielectric los s, tan delta, of thin amorphous chalcogenide films in the As-Se system , implanted with C+ at different doses and of the same films after the rmal annealing. Investigations of the temperature dependence of the di ffuse reflectivity in the near infrared (lambda = 800 nm) have been pe rformed to obtain supplementary data on the optical properties of the implanted films. X-ray photoelectron spectroscopy studies confirm the presence of a high concentration of C+ and its partial transformation from the sp(3) into the sp(2) state.