INFLUENCE OF TEMPERATURE TIME AND DEPTH PROFILES ON THE PULSED XECL LASER CRYSTALLIZATION OF EVAPORATED SILICON FILMS

Amorphous Si (a-Si) films deposited by vacuum evaporation onto oxidize d Si substrates were melted and recrystallized using a XeCl laser beam . The energy densities of the beam were chosen according to the result s of calculations of the temperature evolution within the samples. The influence of the underlying SiO2 thickness on the crystallization was studied. The samples were analyzed by X-ray diffraction and transmiss ion and scanning electron microscopy. It was shown that the complete o r near-complete melting of a-Si and higher temperature gradients in th e melted Si (depending on the SiO2 thickness) are conditions favourabl e for Si crystallization. Overmelting into the oxide resulted in a low er quality of Si film crystallinity.