H. Hofmeister et T. Junghanns, FORMATION OF NANOCRYSTALLINE STRUCTURES IN AMORPHOUS THIN-FILMS OF GERMANIUM, Journal of non-crystalline solids, 193, 1995, pp. 550-555
The formation of nanocrystalline structures during the amorphous-to-cr
ystalline transition for thin films of Ge prepared by physical vapour
deposition has been studied by high resolution electron microscopy. Cr
ystallization at below one half of the melting temperature of Ge was a
chieved during deposition or afterwards by an annealing treatment. The
structural evolution of the nanocrystalline fabric of the Ge films, o
riginating from the amorphous phase, proceeds by heterogeneous nucleat
ion and twin dominated growth. The main structural features formed dur
ing the crystallization include: (i) multiply twinned crystallites nuc
leated at pre-formed embryos; (ii) growth twinning introduced by error
s in the stacking of atoms during crystallization; and (iii) deformati
on twinning due to elastic strains induced in the films during growth.