SOLUTION-LIQUID-SOLID GROWTH OF CRYSTALLINE III-V SEMICONDUCTORS - ANANALOGY TO VAPOR-LIQUID-SOLID GROWTH

Until now, micrometer-scale or larger crystals of the III-V semiconduc tors have not been grown at low temperatures for lack of suitable crys tallization mechanisms for highly covalent nonmolecular solids. A solu tion-liquid-solid mechanism for the growth of InP, InAs, and GaAs is d escribed that uses simple, low-temperature (less than or equal to 203 degrees C), solution-phase reactions. The materials are produced as po lycrystalline fibers or near-single-crystal whiskers having widths of 10 to 150 nanometers and lengths of up to several micrometers. This me chanism shows that processes analogous to vapor-liquid-solid growth ca n operate at low temperatures; similar synthesis routes for other cova lent solids may be possible.